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    首页产品索引VN2460

    VN2460

    购买收藏
    MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 Ohm

     

    产品信息

    This enhancement-mode (normally-off) transistor utilizes a verticalDMOSstructure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      High input impedance and high gain

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    VN2460N3-G-P014EDAC857 HIGH TEMP' SERIES (.156" (3. 立即购买
    VN2460N3-G-P003Yageo贴片电阻 0805 82Ω ±1% 1/8W ±50ppm/℃ 立即购买
    VN2460N8-GSiTime有源晶振 ±25ppm 2.5V 77.76MHz SMD-4 立即购买
    VN2460N3-GLEDdynamicsLED MOD INDUS STAR 4000K 75CRI 立即购买

    应用案例更多案例

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