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    首页产品索引LP0701

    LP0701

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    MOSFET, P-CHANNEL ENHANCEMENT-MODE, -16.5V, 1.5 Ohm

    制造商:Microchip

    中文数据手册

    产品信息

    These enhancement-mode (normally-off) transistors utilize a lateral MOS structure andwell-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices.Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. The low threshold voltage and low on-resistance characteristics are ideally suited for hand held, battery operated applications.

      Ultra-low threshold

      High input impedance

      Low input capacitance

      Fast switching speeds

      Low on-resistance

      Freedom from secondary breakdown

      Low input and output leakage

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    LP0701LG-GMicrochip 立即购买
    LP0701N3-GMicrochip 立即购买

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