描述The LF356-MIL device are the first monolithic JFET input operational amplifiers toincorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors(BI-FET™ Technology). These amplifiers feature lowinput bias and offset currents/low offset voltage and offset voltage drift, coupled with offsetadjust, which does not degrade drift or common-mode rejection. The devices are also designed forhigh slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and alow 1/f noise corner.特性AdvantagesReplace Expensive Hybrid and Module FET Op AmpsRuggedJFETs Allow Blow-Out Free Handling Compared With MOSFET Input DevicesExcellentfor Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/fCornerOffset Adjust Does Not Degrade Drift or Common-Mode Rejection as in MostMonolithic AmplifiersNew Output Stage Allows Use of Large Capacitive Loads(5,000 pF) Without Stability ProblemsInternal Compensation and LargeDifferential Input Voltage CapabilityCommonFeaturesLow Input Bias Current: 30 pALow Input Offset Current: 3pAHigh Input Impedance: 1012ΩLow Input Noise Current: 0.01 pA/√HzHigh Common-Mode Rejection Ratio: 100 dBLarge DC VoltageGain: 106 dBUncommon FeaturesExtremely Fast Settling Time to 0.01%: 1.5 µsFast SlewRate: 12 V/µs Wide Gain Bandwidth: 5 MHz Low Input NoiseVoltage: 12 nV/√Hz All trademarks are the property of their respective owners.