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    首页产品索引FFSP0665A

    FFSP0665A

    购买收藏
     SiC Diode - 650V, 6A, TO-220-2

    制造商:ON

    中文数据手册

    产品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • No Reverse Recovery / No Forward Recovery

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    型号制造商描述购买
    FFSP0665A-- 立即购买

    技术资料

    标题类型大小(KB)下载
    TO-220-2LDPDF32 点击下载
    Silicon Carbide Schottky DiodePDF412 点击下载
    FFSP0665A_LTspiceRAR57 点击下载
    FFSP0665A_SimetrixRAR18 点击下载

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    FTCO3V455A1FJN3301RFYPF2004DNFSA2467
    FAN73895FAN3229T_F085FSB50250ASFERD30M45C
    FNB81060T3FPF2702FL6632FAN6291QF
    FFSP2065Afml22sFPF2110FAN5701
    FL77905FSA2380FGH40T65UQDFFGH50T65UPD
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