首页产品索引VN2222L

    VN2222L

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    MOSFET

     

    产品信息

    This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      High input impedance and high gain

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    VN2222LL-G-P013KEMET贴片电容(MLCC) 1210 6.8nF ±10% 250V X7R 立即购买
    VN2222LL-G-P003MERITEK贴片电阻 0402 30KΩ ±1% 1/16W ±100ppm/℃ 立即购买
    VN2222LL-GMaximIC GP OPAMP 1 CIRCUIT 8DIP 立即购买

    应用案例更多案例

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