首页产品索引VN2450

    VN2450

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    MOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 13 Ohm

     

    产品信息

    This enhancement-mode (normally-off) transistor utilizes a verticalDMOSstructure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      High input impedance and high gain

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    VN2450N3-GSiTime有源晶振 ±35ppm 3V 135MHz SMD3225_6P 立即购买
    VN2450N8-GSUNTSU无源晶振 100Ω 32MHz 8pF ±15ppm -20℃~+70℃ SMD1612_4P 立即购买

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