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    VP2450

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    MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500V, 30 Ohm

    制造商:Microchip

    中文数据手册

    产品信息

    This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      High input impedance and high gain

      Excellent thermal stability

      Integral source-to-drain diode

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    VP2450N8-GMicrochipVP2450是一款低阈值、增强型(常关)晶体管,采用垂直双扩散金属氧化物半导体(DMOS)结构和成熟的硅栅制造工艺。这种结合使得该器件兼具双极晶体管的功率处理能力,以及MOS器件固有的高输入阻抗和正温度系数特性。作为所有MOS结构的共性,该器件不会出现热失控和热致二次击穿现象 立即购买
    VP2450N3-GMicrochip 立即购买

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