首页产品索引VP0808

    VP0808

    购买收藏
    MOSFET, P-CHANNEL ENHANCEMENT-MODE, -80V, 5.0 Ohm

    制造商:Microchip

    中文数据手册

    产品信息

    This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      High input impedance and high gain

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    VP0808L-GMicrochip该增强型(常关)晶体管采用垂直 DMOS 结构和成熟的硅栅制造工艺。这种结合产生的器件具有双极晶体管的功率处理能力,以及 MOS 器件固有的高输入阻抗和正温度系数。作为所有 MOS 结构的特性,该器件不会出现热失控和热致二次击穿现象。适用于需要非常低的阈值电压、高击穿电压、高输入阻抗、低输入电容和快速开关速度的各种开关和放大应用。 立即购买

    应用案例更多案例

    系列产品索引查看所有产品

    Copyright ©2012-2025 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照