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    TN2425

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    MOSFET, N-CHANNEL ENHANCEMENT-MODE, 250V, 3.5 Ohm

     

    产品信息

    This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Low threshold

      High input impedance

      Low input capacitance

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

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    型号制造商描述购买
    TN2425N8-GMaximIC OPAMP GP 2 CIRCUIT 14SOIC 立即购买

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