首页产品索引TN0106

    TN0106

    购买收藏
    MOSFET, N-CHANNEL ENCHANCEMENT-MODE, 60V, 3.0 Ohm

     

    产品信息

    This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Low threshold - 2.0V max.

      High input impedance

      Low input capacitance - 50pF typical

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    TN0106N3-G-P013MERITEK贴片电阻 0402 5.11KΩ ±1% 1/16W ±100ppm/℃ 立即购买
    TN0106N3-G-P003Knowles贴片电容(MLCC) 0805 10pF ±5% 63V C0G(NP0) 立即购买
    TN0106N3-GAker有源晶振 3.3V 7.3728MHz SMD-4 立即购买

    应用案例更多案例

    系列产品索引查看所有产品

    TPS53632GTC54TPS54116-Q1TPS730
    TPS62736TLV2541TMS320F280045TPS61021A
    TLC2252-DIETPS40400TS-1101-C-WTMS320C5515
    TC646TC1426TL431ATMMDB3
    TLC0820ATN0620THS12082TLC59582
    Copyright ©2012-2024 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照