TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode (normally-off) transistor utilizes an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

  Low threshold

  Low on-resistance

  Low input capacitance

  Fast switching speeds

  Freedom from secondary breakdown

  Low input and output leakage

  Independent, electrically isolatedN- and P-channels