ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the efficiency of the application. This allows designers to reduce the size of their heatsinks.

This device is also intended for applications in power supplies and power conversions systems, and other power switching applications.

ST的stth12s06是一个艺术的超快恢复二极管的状态。采用600 V铂掺杂平面技术的使用，这种二极管将优于功率因数校正电路hardswitching条件操作。极低的反向恢复的stth12s06电流，降低了开关MOSFET的功率损耗，从而提高应用程序的效率。这使设计人员能够降低其散热片尺寸。

该器件还用于在电源和电源转换系统中的应用，以及其他功率开关应用。

Key Features

• Ultrafast recovery

• Low reverse recovery current

• Reduces losses in diode and switching transistor

• Low thermal resistance

• Higher frequency operation

• Insulated voltage: 1500 V_RMS

主要特点

超快恢复

低反向恢复电流

减少二极管和开关晶体管的损耗

低热阻

高频操作

绝缘电压：1500 VRMS