The NCP81075 is a high performance dual mosfet (high side and low side) gate-drive IC designed for high-voltage, high-speed, driving MOSFETs operating up to 180 V. The NCP81075 integrates a driver IC and a bootstrap diode and offers drive capability up to 4A.The high side and low side drivers are independently controlled with a matched typical propagation delay of 3.5ns.This driver is ideally suited for use in high voltage buck applications, isolated power supplies,2 switch and active clamp forward converters. the device can also be used in solar optimizer and solar inverter applications.The part is offered in a SO8, 8 pin DFN, and 10 pin DFN package and fully specified from -40C to 140C.

• Drives two N-Channel MOSFETs in High & Low Side
• Integrated Bootstrap Diode for High Side Gate Drive
• Bootstrap Supply Voltage Range up to 180V
• 4A Source, 4A Sink Output Current Capability
• Drives 1nF Load with Typical Rise/Fall Times of 8ns/7 ns
• Wide Supply Voltage Range 8.5V to 20V
• Fast Propagation Delay Times (Typ. 20 ns)
• 2 ns Delay Matching (Typical)
• Under-Voltage Lockout (UVLO) Protection for Drive Voltage
• Operating Junction Temperature Range of -40°C to 140°C