首页产品索引FFSP1265A

    FFSP1265A

    购买收藏
     SiC Diode - 650V, 12A, TO-220-2

    制造商:ON

    中文数据手册

    产品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • No Reverse Recovery / No Forward Recovery

    在线购买

    型号制造商描述购买
    FFSP1265A-- 立即购买

    技术资料

    标题类型大小(KB)下载
    TO-220-2LDPDF32 点击下载
    Silicon Carbide Schottky DiodePDF415 点击下载
    FFSP1265A_LTspiceRAR57 点击下载
    FFSP1265A_PspiceRAR15 点击下载
    FFSP1265A_SimetrixRAR18 点击下载

    应用案例更多案例

    系列产品索引查看所有产品

    FSBB15CH60DFAN3223T_F085FAN2356AMPXFTCO3V455A1
    FMS6363FAN9611FDC6329LFAN3228T_F085
    FAN53541FAN7601BFMS6690FDH3595
    FGA30S120PFOD8320FJV3114RFCH099N65S3
    FJN3314RFSCQ1265RTFPF2215FPF2123
    Copyright ©2012-2024 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照