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    首页产品索引FFSH15120A

    FFSH15120A

    购买收藏
     SiC Diode, 1200V, 15A, TO-247-2

    制造商:ON

    中文数据手册

    产品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • Avalanche Rated 145 mJ
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • Ease of Paralleling
    • No Reverse Recovery / No Forward Recovery

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    型号制造商描述购买
    FFSH15120A-- 立即购买

    技术资料

    标题类型大小(KB)下载
    TO-247-2LDPDF80 点击下载
    Silicon Carbide Schottky DiodePDF821 点击下载
    FFSH15120A_PSPICERAR15 点击下载
    FFSH15120A_SIMETRIXRAR23 点击下载

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