尊敬的客户:为给您持续提供一对一优质服务,即日起,元器件订单实付商品金额<300元时,该笔订单按2元/SKU加收服务费,感谢您的关注与支持!
    首页产品索引FFSD08120A

    FFSD08120A

    购买收藏
     SiC Diode - 1200V, 8A, DPAK

    制造商:ON

    中文数据手册

    产品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • Ease of Paralleling
    • No Reverse Recovery / No Forward Recovery

    在线购买

    型号制造商描述购买
    FFSD08120A-- 立即购买

    技术资料

    标题类型大小(KB)下载
    DPAK3 (TO-252 3 LD)PDF152 点击下载
    Silicon Carbide Schottky DiodePDF308 点击下载
    FFSD08120A_PspiceRAR14 点击下载
    FFSD08120A_SIMetrixRAR23 点击下载

    应用案例更多案例

    系列产品索引查看所有产品

    FSB44104AFL77905FL7732FDMF6820C
    FAN6248FDPF8D5N10CFODM8801AFAN7080_GF085
    FSB43004AFL7734FSB147HFAN3122C_F085
    FDMF6704VFSEZ1317WAFSL146MRBNFDMF6704
    FOD814AFSB50825ASFSBH0F70WAFAN49100
    Copyright ©2012-2025 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照