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This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High inputimpedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
DN3765 封装图
| 型号 | 制造商 | 描述 | 购买 |
|---|---|---|---|
| DN3765K4-G | SiTime | 有源晶振 ±35ppm 3V 625MHz SMD-6 | 立即购买 |
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DN25的典型应用电路 DN25的典型应用电路如图所示。输入电压V1为25V稳定度为0.12
DN25的管脚配置和内部结构框图
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