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首页产品索引2N6661

2N6661

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MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 Ohm

 

产品信息

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

  Free from secondary breakdown

  Low power drive requirement

  Ease of paralleling

  Low CISS and fast switching speeds

  Excellent thermal stability

  Integral source-drain diode

  High input impedance and high gain

电路图、引脚图和封装图

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型号制造商描述购买
2N6661SiTime有源晶振 310MHz SMD5032_4P 立即购买

应用案例更多案例

系列产品索引查看所有产品

24AA025E642SC36472SC36462309-1HPGGI
215083-82N7002T2SA15932308-1HPGG
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2N652023K640-I/ST2SA216924AA014H
2N64872N62842SC5245A25LC160C
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