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    NCP81080

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     High Side and Low Side Gate Driver, High-Frequency, 180V offering 0.5A source/0.8A capability

    制造商:ON

    中文数据手册

    产品信息

    The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues.The high side and low side drivers are independently controlled.This driver is ideally suited for use in high voltage buck and motor control applications.The part is offered in a SO8 and 8 pin 2mm by 2mm DFN package and fully specified from -40C to 140C.
    • Drives two N-Channel MOSFETs in High & Low Side
    • Integrated Bootstrap Diode for High Side Gate Drive
    • Bootstrap Supply Voltage Range up to 180V
    • 0.5A Source, 0.8A Sink Output Current Capability
    • Drives 1nF Load with Typical Rise/Fall Times of 19ns/17 ns
    • Wide Supply Voltage Range 5.5V to 20V
    • 2 ns Delay Matching (Typical)
    • Under-Voltage Lockout (UVLO) Protection for Drive Voltage
    • Operating Junction Temperature Range of -40°C to 140°C

    在线购买

    型号制造商描述购买
    NCP81080MNTBG-- 立即购买
    NCP81080DR2G-- 立即购买

    技术资料

    标题类型大小(KB)下载
    SOIC-8 Narrow BodyPDF61 点击下载
    DFN8 2.0x2.0x0.9mm, 0.5pPDF31 点击下载
    High Performance Dual MOSFET Gate DriverPDF140 点击下载

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