首页产品索引NCP81080

    NCP81080

    购买收藏
     High Side and Low Side Gate Driver, High-Frequency, 180V offering 0.5A source/0.8A capability

    制造商:ON

    中文数据手册

    产品信息

    The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues.The high side and low side drivers are independently controlled.This driver is ideally suited for use in high voltage buck and motor control applications.The part is offered in a SO8 and 8 pin 2mm by 2mm DFN package and fully specified from -40C to 140C.
    • Drives two N-Channel MOSFETs in High & Low Side
    • Integrated Bootstrap Diode for High Side Gate Drive
    • Bootstrap Supply Voltage Range up to 180V
    • 0.5A Source, 0.8A Sink Output Current Capability
    • Drives 1nF Load with Typical Rise/Fall Times of 19ns/17 ns
    • Wide Supply Voltage Range 5.5V to 20V
    • 2 ns Delay Matching (Typical)
    • Under-Voltage Lockout (UVLO) Protection for Drive Voltage
    • Operating Junction Temperature Range of -40°C to 140°C

    在线购买

    型号制造商描述购买
    NCP81080MNTBG-- 立即购买
    NCP81080DR2G-- 立即购买

    技术资料

    标题类型大小(KB)下载
    SOIC-8 Narrow BodyPDF61 点击下载
    DFN8 2.0x2.0x0.9mm, 0.5pPDF31 点击下载
    High Performance Dual MOSFET Gate DriverPDF140 点击下载

    应用案例更多案例

    系列产品索引查看所有产品

    NCV7462NB6L295MNSVJ5908DSG5NV25256WF
    NLSV4T244NJL0281DNCP1230NV25320
    NCL30088NC7SP32NCV8445NV25640WF
    NB3RL02NCS2220NV24C04WFNB4L6254
    NCS2200NUD3105NCP331NC7ST02
    Copyright ©2012-2024 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照