首页产品索引NCP51705

    NCP51705

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     SiC MOSFET Driver, Low-Side, Single 6 A High-Speed

    制造商:ON

    中文数据手册

    产品信息

    The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.For isolated applications, the NCP51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators.
    • High Peak Output Current with Split Output Stages
    • Extended Positive Voltage Rating up to 28 V Max
    • User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V)
    • Accessible 5 V Reference / Bias Rail
    • Adjustable Under−Voltage Lockout
    • Fast Desaturation Function
    • QFN24 Package 4 x 4 mm

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    型号制造商描述购买
    NCP51705MNTXG-- 立即购买

    技术资料

    标题类型大小(KB)下载
    WQFN24, 4x4, 0.5PPDF58 点击下载
    SiC MOSFETs: Gate Drive OptimizationPDF2048 点击下载
    Single 6 A High-Speed, Low-Side SiC MOSFET DriverPDF339 点击下载

    应用案例更多案例

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