首页产品索引LF356

    LF356

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    JFET 输入运算放大器

    制造商:TI

    中文数据手册

    产品信息

    描述 The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.特性 Advantages Replace Expensive Hybrid and Module FET Op Amps Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices Excellent for Low Noise Applications Using Either High or Low Source Impedance–Very Low 1/f Corner Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems Internal Compensation and Large Differential Input Voltage Capability Common Features Low Input Bias Current: 30 pA Low Input Offset Current: 3 pA High Input Impedance: 1012 Ω Low Input Noise Current: 0.01 pA/√Hz High Common-Mode Rejection Ratio: 100 dB Large DC Voltage Gain: 106 dB Uncommon Features Extremely Fast Settling Time to 0.01%: 4 µs for the LFx55 devices 1.5 µs for the LFx56 1.5 µs for the LFx57 (AV = 5) Fast Slew Rate: 5 V/µs for the LFx5512 V/µs for the LFx56 50 V/µs for the LFx57 (AV = 5) Wide Gain Bandwidth:2.5 MHz for the LFx55 devices 5 MHz for the LFx56 20 MHz for the LFx57 (AV = 5) Low Input Noise Voltage: 20 nV/√Hz for the LFx55 12 nV/√Hz for the LFx56 12 nV/√Hz for the LFx57 (AV = 5)

    技术资料

    标题类型大小(KB)下载
    Applications of the LM3524 Pulse Width ModulatorPDF549 点击下载
    AN-311 Theory and Applications of Logarithmic AmplifiersPDF517 点击下载
    AN-272 Op Amp Booster DesignsPDF959 点击下载

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