首页产品索引FCP190N65S3R0

    FCP190N65S3R0

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     N-Channel SuperFET

    制造商:ON

    产品信息

    SuperFET
    III MOSFET is ON Semiconductor’s brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This advanced technologyis tailored to minimize conduction loss, provide superiorswitching performance, and withstand extreme dv/dt rate.Consequently, SuperFET III MOSFET is very suitable forvarious power system for miniaturization and higher efficiency.
    • 700 V @ TJ = 150 oC
    • Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
    • Ultra Low Gate Charge (Typ. Qg = 33 nC)
    • Optimized Capacitance
    • 100% Avalanche Tested
    • RoHS Compliant
    • Typ. RDS(on) = 159 mΩ
    • Internal Gate Resistance: 0.5ohm

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    技术资料

    标题类型大小(KB)下载
    TO-220-3LDPDF102 点击下载
    Using Fairchild Semiconductor Dual Cool™ MOSFETsPDF501 点击下载
    Maximum Power Enhancement Techniques for SuperSOT™-6 Power MOSFETsPDF319 点击下载
    Shielded Gate PowerTrench® MOSFET Datasheet ExplanationPDF1588 点击下载
    Analysis of MOSFET Failure Modes in LLC Resonant ConverterPDF1707 点击下载
    Driving and Layout Design for Fast Switching Super-Junction MOSFETsPDF2048 点击下载
    MOSFET BasicsPDF1159 点击下载
    Power MOSFET Avalanche GuidelinePDF557 点击下载

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