首页产品索引TP2535

    TP2535

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    MOSFET, P-CHANNEL ENHANCEMENT-MODE, -350V, 25 Ohm

    制造商:Microchip

    中文数据手册

    产品信息

    This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Low threshold (-2.4V max.)

      High inputimpedance

      Low input capacitance (60pF typical)

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    TP2535N3-GMicrochipMOSFET P-CH 350V 0.086A TO92-3 立即购买

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