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    TN0110

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    MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 3.0 Ohm

     

    产品信息

    This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Low threshold - 2.0V max.

      High input impedance

      Low input capacitance - 50pF typical

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    TN0110N3-G-P002Knowles贴片电容(MLCC) 0805 10pF ±5% 500V C0G(NP0) 立即购买
    TN0110N3-GROHM贴片电阻 2010 390Ω ±1% 1W ±100ppm/℃ 立即购买

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