首页产品索引STPSC40065C

    STPSC40065C

    购买收藏
    650体积功率肖特基二极管

     

    产品信息

    The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

    Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions.

    碳化硅二极管是一种超高性能的功率肖特基二极管。它是使用碳化硅衬底制造的。宽禁带材料允许的肖特基二极管结构的设计与650伏的评级。由于肖特基结构,没有恢复被证明在关断和铃声模式是可以忽略不计。最小的电容关断行为是独立的温度。

    特别适合使用在PFC应用,这将促进ST SiC二极管在硬开关条件下的性能。

    Key Features

    • No or negligible reverse recovery

    • Switching behavior independent of temperature

    • Dedicated to PFC applications

    • ECOPACK®2 compliant component

    主要特点

    没有或可以忽略不计的反向恢复

    温度开关行为

    致力于PFC的应用

    ®Ecopack 2兼容的组件


    电路图、引脚图和封装图

    应用案例更多案例

    系列产品索引查看所有产品

    SST25VF512ASS9014STPS4045CSTTH1602C
    SSM2519STTH803STPS15L30CSTPS15L60C
    STTH12003SMP04STPS8L30SST26VF032BA
    STPS1L40STK534U362C-ESTTH1R06-YSSM2517
    STPS10L25STTH5R06-YSTTH15AC06STPS16H100C
    Copyright ©2012-2024 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照