The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

碳化硅二极管是一种超高性能的功率肖特基二极管。它是使用碳化硅衬底制造的。宽禁带材料允许的肖特基二极管结构的设计与650伏的评级。由于肖特基结构，没有恢复被证明在关断和铃声模式是可以忽略不计。最小的电容关断行为是独立的温度。

特别适合于使用在特定的桥少的拓扑结构，这种双650伏整流器将提高在硬开关条件下的性能。它的高正向浪涌能力，保证了良好的鲁棒性，在暂态阶段。

Key Features

• No or negligible reverse recovery

• Switching behavior independent of temperature

• Suited for specific bridge-less topologies

• High forward surge capability

• Insulated package:

• Capacitance: 7 pF

• Insulated voltage: 2500 V rms

主要特点

没有或可以忽略不计的反向恢复

温度开关行为

适用于特定的桥梁，较少的拓扑结构

高正向浪涌能力

绝缘包：

电容：7

绝缘电压：2500伏均方根