当前“栅极驱动器”分类下共计4961条型号数据

栅极驱动器

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MicrochipNKKSTNJR CorporationHoneywellBivar
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品牌

包装

封装/外壳

供应商器件封装

驱动配置

通道类型

驱动器数

栅极类型

电压-电源

电流-峰值输出(灌入,拉出)

输入类型

上升/下降时间(典型值)

工作温度

安装类型

逻辑电压 -VIL,VIH

高压侧电压-最大值(自举)

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图片型号制造商最优价格操作包装封装/外壳供应商器件封装驱动配置通道类型驱动器数栅极类型电压-电源电流-峰值输出(灌入,拉出)输入类型上升/下降时间(典型值)工作温度安装类型逻辑电压 -VIL,VIH高压侧电压-最大值(自举)
IR2151
Infineon
¥0.00
管件 8-DIP(0.300",7.62mm)8-DIP半桥同步2IGBT,N沟道MOSFET10V~20V125mA,250mARC输入电路80ns,40ns-40°C~150°C(TJ)通孔-600V
IR2130
Infineon
¥0.00
管件 28-DIP(0.600",15.24mm)28-DIP半桥3相6IGBT,N沟道MOSFET10V~20V250mA,500mA反相80ns,35ns-40°C~150°C(TJ)通孔0.8V,2.2V600V
98-0247
Infineon
¥0.00
管件 16-SOIC(0.295",7.50mm宽)16-SOIC半桥独立式2IGBT,N沟道MOSFET3.3V~20V2A,2A非反相25ns,17ns-40°C~150°C(TJ)表面贴装6V,9.5V600V
IR2106S
Infineon
¥8.54
管件 8-SOIC(0.154",3.90mm宽)8-SOIC半桥独立式2IGBT,N沟道MOSFET10V~20V200mA,350mA非反相150ns,50ns-40°C~150°C(TJ)表面贴装0.8V,2.9V600V
IR2153
Infineon
¥2.38
管件 8-DIP(0.300",7.62mm)8-DIP半桥同步2N沟道MOSFET10V~15.6V-RC输入电路80ns,40ns-40°C~150°C(TJ)通孔-600V
IR2102S
Infineon
¥0.00
管件 8-SOIC(0.154",3.90mm宽)8-SOIC半桥独立式2IGBT,N沟道MOSFET10V~20V210mA,360mA反相100ns,50ns-40°C~150°C(TJ)表面贴装0.8V,3V600V
IR2101S
Infineon
¥3.10
管件 8-SOIC(0.154",3.90mm宽)8-SOIC半桥独立式2IGBT,N沟道MOSFET10V~20V210mA,360mA非反相100ns,50ns-40°C~150°C(TJ)表面贴装0.8V,3V600V
IR2110S
Infineon
¥0.00
管件 16-SOIC(0.295",7.50mm宽)16-SOIC半桥独立式2IGBT,N沟道MOSFET3.3V~20V2A,2A非反相25ns,17ns-40°C~150°C(TJ)表面贴装6V,9.5V500V
98-0255
Infineon
¥0.00
管件 14-DIP(0.300",7.62mm)14-DIP半桥独立式2IGBT,N沟道MOSFET10V~20V200mA,350mA非反相150ns,50ns-40°C~150°C(TJ)通孔0.8V,2.9V600V
IR21094S
Infineon
¥0.00
管件 14-SOIC(0.154",3.90mm宽)14-SOIC半桥同步2IGBT,N沟道MOSFET10V~20V200mA,350mA非反相150ns,50ns-40°C~150°C(TJ)表面贴装0.8V,2.9V600V
IR2111S
Infineon
¥0.00
管件 8-SOIC(0.154",3.90mm宽)8-SOIC半桥同步2IGBT,N沟道MOSFET10V~20V250mA,500mA非反相80ns,40ns-40°C~150°C(TJ)表面贴装8.3V,12.6V600V
IR2111STR
Infineon
¥0.00
带卷(TR) 8-SOIC(0.154",3.90mm宽)8-SOIC半桥同步2IGBT,N沟道MOSFET10V~20V250mA,500mA非反相80ns,40ns-40°C~150°C(TJ)表面贴装8.3V,12.6V600V
98-0065
Infineon
¥0.00
管件 8-SOIC(0.154",3.90mm宽)8-SOIC高压侧单路1IGBT,N沟道MOSFET10V~20V250mA,500mA非反相80ns,40ns-40°C~150°C(TJ)表面贴装6V,9.5V600V
IR2127STR
Infineon
¥0.00
带卷(TR) 8-SOIC(0.154",3.90mm宽)8-SOIC高压侧或低压侧单路1IGBT,N沟道MOSFET12V~20V250mA,500mA非反相80ns,40ns-40°C~150°C(TJ)表面贴装0.8V,3V600V
IR2130J
Infineon
¥0.00
管件 44-LCC(J形引线),32引线44-PLCC,32引线(16.58x16.58)半桥3相6IGBT,N沟道MOSFET10V~20V250mA,500mA反相80ns,35ns-40°C~150°C(TJ)表面贴装0.8V,2.2V600V
IR2132
Infineon
¥0.00
管件 28-DIP(0.600",15.24mm)28-DIP半桥3相6IGBT,N沟道MOSFET10V~20V250mA,500mA反相80ns,35ns-40°C~150°C(TJ)通孔0.8V,2.2V600V
IR21362J
Infineon
¥0.00
管件 44-LCC(J形引线),32引线44-PLCC,32引线(16.58x16.58)半桥3相6IGBT,N沟道MOSFET11.5V~20V200mA,350mA反相,非反相125ns,50ns-40°C~150°C(TJ)表面贴装0.8V,3V600V
IR21531S
Infineon
¥0.00
管件 8-SOIC(0.154",3.90mm宽)8-SOIC半桥同步2N沟道MOSFET10V~15.6V-RC输入电路80ns,45ns-40°C~125°C(TJ)表面贴装-600V
IR2213
Infineon
¥0.00
管件 14-DIP(0.300",7.62mm)14-DIP半桥独立式2IGBT,N沟道MOSFET12V~20V2A,2.5A非反相25ns,17ns-55°C~150°C(TJ)通孔6V,9.5V1200V
IR2155
Infineon
¥0.00
管件 8-DIP(0.300",7.62mm)8-DIP半桥同步2IGBT,N沟道MOSFET10V~20V250mA,500mARC输入电路80ns,45ns-40°C~150°C(TJ)通孔-600V